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1

Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM

Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, Ming Liu

Journal:

Advanced Materials

Year:

2012

Language:

english

File:

PDF, 1.19 MB

english, 2012

2

Resistive switching mechanism of Ag/ZrO2:Cu/Pt memory cell

Shibing Long, Qi Liu, Hangbing Lv, Yingtao Li, Yan Wang, Sen Zhang, Wentai Lian, Kangwei Zhang, Ming Wang, Hongwei Xie, Ming Liu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2011

Language:

english

File:

PDF, 583 KB

english, 2011

3

Programming resistive switching memory by a charged capacitor

Sen Zhang, Qi Liu, Wei Wang, Hangbing Lv, Qingyun Zuo, Yan Wang, Yingtao Li, Wentai Lian, Shibing Long, Qin Wang, Ming Liu

Journal:

Applied Physics A: Materials Science & Processing

Year:

2011

Language:

english

File:

PDF, 419 KB

english, 2011

4

Progress in rectifying-based RRAM passive crossbar array

KangWei Zhang, ShiBing Long, Qi Liu, HangBing Lü, YingTao Li, Yan Wang, WenTai Lian, Ming Wang, Sen Zhang, Ming Liu

Journal:

Science China Technological Sciences

Year:

2011

Language:

english

File:

PDF, 884 KB

english, 2011

5

Approaches for improving the performance of filament-type resistive switching memory

WenTai Lian, ShiBing Long, HangBing Lü, Qi Liu, YingTao Li, Sen Zhang, Yan Wang, ZongLiang Huo, YueHua Dai, JunNing Chen, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2011

Language:

english

File:

PDF, 551 KB

english, 2011

6

An overview of resistive random access memory devices

YingTao Li, ShiBing Long, Qi Liu, HangBing Lü, Su Liu, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2011

Language:

english

File:

PDF, 832 KB

english, 2011

7

Resistive Switching: Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM (Adv. Mater. 14/2012)

Qi Liu, Jun Sun, Hangbing Lv, Shibing Long, Kuibo Yin, Neng Wan, Yingtao Li, Litao Sun, Ming Liu

Journal:

Advanced Materials

Year:

2012

File:

PDF, 284 KB

2012

8

Nonvolatile multilevel memory effect in Cu/WO3/Pt device structures

Yingtao Li, Shibing Long, Qi Liu, Qin Wang, Manhong Zhang, Hangbing Lv, Lubing Shao, Yan Wang, Sen Zhang, Qingyun Zuo, Su Liu, Ming Liu

Journal:

physica status solidi (RRL) - Rapid Research Letters

Year:

2010

Language:

english

File:

PDF, 224 KB

english, 2010

9

Improving the electrical performance of resistive switching memory using doping technology

Yan Wang, Qi Liu, HangBing Lü, ShiBing Long, Wei Wang, YingTao Li, Sen Zhang, WenTai Lian, JianHong Yang, Ming Liu

Journal:

Chinese Science Bulletin

Year:

2012

Language:

english

File:

PDF, 683 KB

english, 2012

10

In situ observation of nickel as an oxidizable electrode material for the solid-electrolyte-based resistive random access memory

Sun, Jun, Liu, Qi, Xie, Hongwei, Wu, Xing, Xu, Feng, Xu, Tao, Long, Shibing, Lv, Hangbing, Li, Yingtao, Sun, Litao, Liu, Ming

Journal:

Applied Physics Letters

Year:

2013

Language:

english

File:

PDF, 981 KB

english, 2013

11

Investigation of resistive switching in Cu-doped HfO 2 thin film for multilevel non-volatile memory applications

Wang, Yan, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Qin, Zhang, Manhong, Zhang, Sen, Li, Yingtao, Zuo, Qingyun, Yang, Jianhong, Liu, Ming

Journal:

Year:

2010

Language:

english

File:

PDF, 580 KB

english, 2010

12

Nitrogen-induced improvement of resistive switching uniformity in a HfO 2 -based RRAM device

Xie, Hongwei, Liu, Qi, Li, Yingtao, Lv, Hangbing, Wang, Ming, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Long, Shibing, Liu, Su, Liu, Ming

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 1.28 MB

english, 2012

13

Bipolar one diode–one resistor integration for high-density resistive memory applications

Li, Yingtao, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Ming, Xie, Hongwei, Zhang, Kangwei, Huo, Zongliang, Liu, Ming

Journal:

Year:

2013

Language:

english

File:

PDF, 546 KB

english, 2013

14

SPIE Proceedings [SPIE 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2012) - Xiamen, China (Thursday 26 April 2012)] 6th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optical Test and Measurement Technology and Equipment - Dynamic deformation analysis of light-weight mirror

Zhang, Yingtao, Cao, Xuedong, Kuang, Long, Yang, Wei, Zhang, Yudong, Xiang, Libin, To, Sandy

Year:

2012

Language:

english

File:

PDF, 968 KB

english, 2012

15

Wang, Yan, Lv, Hangbing, Wang, Wei, Liu, Qi, Long, Shibing, Wang, Qin, Huo, Zongliang, Zhang, Sen, Li, Yingtao, Zuo, Qingyun

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 294 KB

english, 2010

16

Effect of low constant current stress treatment on the performance of the Cu/ZrO 2 /Pt resistive switching device

Xie, Hongwei, Liu, Qi, Li, Yingtao, Lv, Hangbing, Wang, Ming, Zhang, Kangwei, Long, Shibing, Liu, Su, Liu, Ming

Journal:

Semiconductor Science and Technology

Year:

2012

Language:

english

File:

PDF, 469 KB

english, 2012

17

Improvement of resistive switching characteristics in ZrO 2 film by embedding a thin TiO x layer

Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Yan, Zhang, Sen, Lian, Wentai, Wang, Ming, Zhang, Kangwei, Xie, Hongwei, Liu, Su, Liu, Ming

Journal:

Year:

2011

Language:

english

File:

PDF, 567 KB

english, 2011

18

[IEEE 2010 IEEE 3rd International Nanoelectronics Conference (INEC) - Hong Kong, China (2010.01.3-2010.01.8)] 2010 3rd International Nanoelectronics Conference (INEC) - Self-rectifying resistive memory based on Au nanocrystal-embedded zirconium oxide for crossbar array application

Qingyun Zuo,, Shibing Long,, Qi Liu,, Sen Zhang,, Qin Wang,, Yingtao Li,, Yan Wang,, Ming Liu,

Year:

2010

Language:

english

File:

PDF, 89 KB

english, 2010

19

Self-Rectifying Resistive-Switching Device With $ \hbox{a-Si/WO}_{3}$ Bilayer

Lv, Hangbing, Li, Yingtao, Liu, Qi, Long, Shibing, Li, Ling, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2013

Language:

english

File:

PDF, 331 KB

english, 2013

20

[IEEE 2011 International Symposium on VLSI Technology, Systems and Application (VLSI-TSA) - Hsinchu, Taiwan (2011.04.25-2011.04.27)] Proceedings of 2011 International Symposium on VLSI Technology, Systems and Applications - Voltage driving or current driving: Which is preferred for RRAM programming?

Lv, Hangbing, Lian, Wentai, Long, Shibing, Liu, Qi, Li, Yingtao, Wang, Wei, Wang, Yan, Zhang, Sen, Liu, Ming

Year:

2011

Language:

english

File:

PDF, 324 KB

english, 2011

21

$ hbox{ZrO}_{2}$-Based ReRAM With a Cu Nanocrystal Insertion Layer]]>

Liu, Qi, Long, Shibing, Wang, Wei, Tanachutiwat, Sansiri, Li, Yingtao, Wang, Qin, Zhang, Manhong, Huo, Zongliang, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 391 KB

english, 2010

22

Investigation of One-Dimensional Thickness Scaling on $ \hbox{Cu/HfO}_{x}/\hbox{Pt}$ Resistive Switching Device Performance

Wang, Ming, Lv, Hangbing, Liu, Qi, Li, Yingtao, Xu, Zhongguang, Long, Shibing, Xie, Hongwei, Zhang, Kangwei, Liu, Xiaoyu, Sun, Haitao, Yang, Xiaoyi, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2012

Language:

english

File:

PDF, 485 KB

english, 2012

23

Resistive Switching Properties of $\hbox{Au}/ \hbox{ZrO}_{2}/\hbox{Ag}$ Structure for Low-Voltage Nonvolatile Memory Applications

Yingtao Li,, Shibing Long,, Manhong Zhang,, Qi Liu,, Lubing Shao,, Sen Zhang,, Yan Wang,, Qingyun Zuo,, Su Liu,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 478 KB

english, 2010

24

$\hbox{ZrO}_{2}$-Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application

Qingyun Zuo,, Shibing Long,, Shiqian Yang,, Qi Liu,, Lubing Shao,, Qin Wang,, Sen Zhang,, Yingtao Li,, Yan Wang,, Ming Liu,

Journal:

IEEE Electron Device Letters

Year:

2010

Language:

english

File:

PDF, 227 KB

english, 2010

25

Reset Instability in $\hbox{Cu}/\hbox{ZrO}_{2}$:Cu/Pt RRAM Device

Li, Yingtao, Long, Shibing, Lv, Hangbing, Liu, Qi, Wang, Wei, Wang, Qin, Huo, Zongliang, Wang, Yan, Zhang, Sen, Liu, Su, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 302 KB

english, 2011

26

Self-rectifying effect in gold nanocrystal-embedded zirconium oxide resistive memory

Zuo, Qingyun, Long, Shibing, Liu, Qi, Zhang, Sen, Wang, Qin, Li, Yingtao, Wang, Yan, Liu, Ming

Journal:

Journal of Applied Physics

Year:

2009

Language:

english

File:

PDF, 602 KB

english, 2009

27

Improved Resistive Switching Uniformity in $ \hbox{Cu/HfO}_{2}/\hbox{Pt}$ Devices by Using Current Sweeping Mode

Lian, Wentai, Lv, Hangbing, Liu, Qi, Long, Shibing, Wang, Wei, Wang, Yan, Li, Yingtao, Zhang, Sen, Dai, Yuehua, Chen, Junning, Liu, Ming

Journal:

IEEE Electron Device Letters

Year:

2011

Language:

english

File:

PDF, 426 KB

english, 2011

28

[ECS ISTC/CSTIC 2009 (CISTC) - Shanghai, China (March 19 - March 20, 2009)] ECS Transactions - Simulation of Retention Characteristics for Metal Nanocrystal Nonvolatile Memory with a Modified Direct Tunneling Model

Li, Yingtao, Liu, Ming, Long, Shibing, Wang, Qin, Liu, Qi, Zhang, Sen, Wang, Yan, Zuo, Qingyun, Liu, Su

Year:

2009

Language:

english

File:

PDF, 364 KB

english, 2009

29

Response to “Comment on Real-Time Observation on Dynamic Growth/Dissolution of Conductive Filaments in Oxide-Electrolyte-Based ReRAM”

Liu, Qi, Jun, Sun, Lv, Hangbing, Long, Shibing, Li, Ling, Yin, Kuibo, Wan, Neng, Li, Yingtao, Sun, Litao, Liu, Ming

Journal:

Advanced Materials

Year:

2013

Language:

english

File:

PDF, 231 KB

english, 2013

30

Thermal crosstalk in 3-dimensional RRAM crossbar array

Sun, Pengxiao, Lu, Nianduan, Li, Ling, Li, Yingtao, Wang, Hong, Lv, Hangbing, Liu, Qi, Long, Shibing, Liu, Su, Liu, Ming

Journal:

Scientific Reports

Year:

2015

Language:

english

File:

PDF, 1.37 MB

english, 2015

31

AIP Conference Proceedings [AIP ION IMPLANTATION TECHNOLOGY 2012: Proceedings of the 19th International Conference on Ion Implantation Technology - Valladolid, Spain (25–29 June 2012)] - Resistive switching properties of HfO[sub 2]-based ReRAM with implanted Si/Al ions

Xie, Hongwei, Wang, Ming, Kurunczi, Peter, Erokhin, Yuri, Liu, Qi, Lv, Hangbing, Li, Yingtao, Long, Shibing, Liu, Su, Liu, Ming

Year:

2012

Language:

english

File:

PDF, 600 KB

english, 2012

32

[IEEE 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Dresden, Germany (2018.3.19-2018.3.23)] 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE) - Improving the efficiency of thermal covert channels in multi-/many-core systems

Long, Zijun, Wang, Xiaohang, Jiang, Yingtao, Cui, Guofeng, Zhang, Li, Mak, Terrence

Year:

2018

Language:

english

File:

PDF, 208 KB

english, 2018

33

Mechanistic insights into selective adsorption and separation of multi-component anionic dyes using magnetic zeolite imidazolate framework-67 composites

Xue, Yinghao, Xiang, Ping, Wang, Hongwu, Jiang, Yuzhu, Long, Yingtao, Lian, Huilan, Shi, Wenxin

Journal:

Journal of Molecular Liquids

Year:

2019

Language:

english

File:

PDF, 2.80 MB

english, 2019